STW13NK100Z

Производится
STW13NK100Z - Stmicroelectronics
Увеличить
Краткое описание: 1kV 13A N-CH MOSFET TO-247 700mR RdsOn
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 13A continuous drain current. This component offers a typical drain-source on-resistance of 0.56 Ohm and a maximum of 700mR. Operating within a -55°C to 150°C temperature range, it supports up to 350W power dissipation. The MOSFET is housed in a TO-247 package with through-hole mounting and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 45ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 700mR
Package/Case TO-247
Current Rating 13A
RoHS Compliant Yes
DC Rated Voltage 1kV
Package Quantity 30
Input Capacitance 6nF
Power Dissipation 350W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 45ns
Turn-Off Delay Time 145ns
Reach SVHC Compliant No
Max Power Dissipation 350W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 700mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 1kV
Drain-source On Resistance-Max 700mR
Drain to Source Breakdown Voltage 1kV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.