STW160N75F3
Снят с производства
Краткое описание:
75V 120A N-CH MOSFET TO-247 4mR Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 75V drain-source breakdown voltage and 120A continuous drain current. Offers a low 4mΩ maximum drain-source on-resistance. Operates within a -55°C to 175°C temperature range with 330W maximum power dissipation. Packaged in a TO-247 through-hole mount with 3 pins. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 6.75nF |
| Power Dissipation | 330W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 4MR |
| Drain to Source Breakdown Voltage | 75V |
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