STW18NM60N

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STW18NM60N - Stmicroelectronics
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Краткое описание: 600V 13A N-Ch MOSFET TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. Offers a typical on-resistance of 0.26 Ohm and a maximum of 285mR. Designed for through-hole mounting in a TO-247 package, this device boasts fast switching speeds with a 12ns turn-on delay and 25ns fall time. Maximum power dissipation is rated at 110W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II
Fall Time 25ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 285mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 1nF
Threshold Voltage 3V
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 55ns
Reach SVHC Compliant No
Max Power Dissipation 110W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 285mR

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