STW18NM80
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Краткое описание:
800V N-Channel MOSFET, 17A, 295mR, TO-247
Дополнительная информация
N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 17A continuous drain current. This MDmesh™ series component offers a low 295mΩ drain-to-source resistance (Rds On Max) and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -65°C to 150°C. Key switching characteristics include an 18ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 295mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.07nF |
| Power Dissipation | 190W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 96ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 295mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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