STW19NM60N

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STW19NM60N - Stmicroelectronics
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Краткое описание: 600V 13A N-CH MOSFET TO-247 260mR Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade N-channel Power MOSFET, 600V drain-to-source breakdown voltage, 13A continuous drain current, and 260mΩ drain-to-source resistance. Features a TO-247-3 package for through-hole mounting, with a maximum power dissipation of 110W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 12ns turn-on delay and 55ns turn-off delay. RoHS compliant and part of the MDmesh™ II series.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series Automotive, AEC-Q101, MDmesh™ II
Polarity N-CHANNEL
Fall Time 25ns
Packaging Rail/Tube
Rds On Max 285mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 60
Input Capacitance 1nF
Power Dissipation 110W
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 55ns
Max Power Dissipation 110W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 260mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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