STW20N95K5

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STW20N95K5 - Stmicroelectronics
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Краткое описание: N-Channel 950V 17.5A MOSFET TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 950V drain-source breakdown voltage and 17.5A continuous drain current. Offers a low 0.275 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and a 20ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series SuperMESH5™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 330mR
Nominal Vgs 4V
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.5nF
Power Dissipation 250W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 250W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 330mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 17.5A
Drain to Source Voltage (Vdss) 950V
Drain-source On Resistance-Max 330MR
Drain to Source Breakdown Voltage 950V

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