STW20NM65N
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Краткое описание:
N-CHANNEL MOSFET 650V 19A TO-247-3 Through Hole
Дополнительная информация
The STW20NM65N is a 650V N-channel MOSFET with a continuous drain current of 19A. It features a drain to source breakdown voltage of 650V and a drain to source resistance of 190mR. The device is packaged in a TO-247-3 flange mount package and is suitable for through hole mounting. The STW20NM65N operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.5nF |
| Power Dissipation | 160W |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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