STW21NM60ND

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STW21NM60ND - Stmicroelectronics
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Краткое описание: 600V 17A N-CH MOSFET TO-247, 220mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. This component offers a low 0.17 Ohm typical drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key specifications include a 4V threshold voltage, 1.8nF input capacitance, and fast switching times with a 48ns fall time. Maximum power dissipation is rated at 140W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device includes a fast diode.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series FDmesh™
Polarity N-CHANNEL
Fall Time 48ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 220mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.8nF
Power Dissipation 140W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 140W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 220mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 220mR
Drain to Source Breakdown Voltage 600V

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