STW24NM60N
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Краткое описание:
600V N-CH MOSFET, 17A, 190mR, TO-247
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 11.5ns turn-on delay and 37ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 37ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 73ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Drain to Source Breakdown Voltage | 600V |
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