STW26NM60N
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Краткое описание:
600V 20A N-CH MOSFET TO-247 165mR
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers a low 0.135 Ohm typical drain-source on-resistance, with a maximum of 0.165 Ohm. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 140W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 165mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 140W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 85ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165mR |
| Drain to Source Breakdown Voltage | 600V |
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