STW26NM60ND

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STW26NM60ND - Stmicroelectronics
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Краткое описание: 600V 21A N-CH MOSFET TO-247, 145mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 0.145 Ohm typical drain-source resistance and a maximum of 175mR. Designed with a fast diode, it operates within a -55°C to 150°C temperature range and dissipates up to 190W. Packaged in a TO-247-3, this RoHS compliant MOSFET boasts fast switching characteristics with turn-on delay times of 22ns and fall times of 27.5ns.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series FDmesh™ II
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 27.5ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 175mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.817nF
Number of Channels 1
Turn-On Delay Time 22ns
Turn-Off Delay Time 69ns
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 145mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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