STW28NM50N
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Краткое описание:
500V N-CH MOSFET, 21A, 158mR RdsOn, TO-247
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 158mΩ maximum drain-source on-resistance and a 150W power dissipation. Designed with a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with turn-on delay of 13.6ns and fall time of 52ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 52ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 158mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 600 |
| Input Capacitance | 1.735nF |
| Power Dissipation | 150W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 158mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 158mR |
| Drain to Source Breakdown Voltage | 500V |
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