STW31N65M5

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STW31N65M5 - Stmicroelectronics
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Краткое описание: 650V 22A N-CH MOSFET TO-247 148mR RdsOn
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. This through-hole component offers a maximum on-resistance of 148mΩ and 150W power dissipation, housed in a TO-247 package. Operating across a wide temperature range from -55°C to 150°C, it includes a 25V gate-source voltage rating and 816pF input capacitance. The device is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ V
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 148mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 816pF
Power Dissipation 150W
Turn-On Delay Time 46ns
Radiation Hardening No
Turn-Off Delay Time 46ns
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 148mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 148mR
Drain to Source Breakdown Voltage 650V

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