STW33N60M2

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STW33N60M2 - Stmicroelectronics(ST)
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Краткое описание: 600V 26A N-CH MOSFET TO-247 108mR
Производитель Stmicroelectronics(ST)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. This through-hole component offers a low 0.108 Ohm typical drain-source resistance and 190W maximum power dissipation. Designed with a TO-247 package, it boasts fast switching characteristics with a 9ns fall time and 16ns turn-on delay. Operating across a -55°C to 150°C temperature range, this RoHS compliant device is ideal for demanding power applications.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II Plus
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 125mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.781nF
Power Dissipation 190W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 16ns
Turn-Off Delay Time 109ns
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 108mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 26A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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