STW34NM60ND
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Краткое описание:
600V 29A N-CH MOSFET TO-247, 110mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This TO-247 packaged device offers a low 110mΩ maximum drain-source on-resistance and 190W maximum power dissipation. Designed with a 4V threshold voltage and fast switching characteristics including 30ns turn-on delay and 61.8ns fall time, it incorporates a fast diode. Suitable for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | FDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 61.8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 110mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.785nF |
| Power Dissipation | 190W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 111ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 110MR |
| Drain to Source Breakdown Voltage | 600V |
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