STW36NM60ND

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STW36NM60ND - Stmicroelectronics
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Краткое описание: 600V 29A N-CH MOSFET TO-247 FDmesh II Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade N-channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This component offers a low 0.097 Ohm typical drain-source on-resistance and is housed in a TO-247 package. Key specifications include a 650V breakdown voltage, 190W power dissipation, and fast switching times with a 30ns turn-on delay. Designed for through-hole mounting, it operates across a -55°C to 150°C temperature range and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series Automotive, AEC-Q101, FDmesh™ II
Polarity N-CHANNEL
Fall Time 61.8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 110mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 2.785nF
Power Dissipation 190W
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 111ns
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 110mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 110mR
Drain to Source Breakdown Voltage 650V

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