STW43NM60N

Не рекомендуется для новых проектов
STW43NM60N - Stmicroelectronics
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Краткое описание: 600V 35A N-CH MOSFET TO-247 88mR MDmesh II
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This second-generation MDmesh™ II device offers a low 88mΩ drain-source on-resistance and 255W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it boasts fast switching speeds with a 25ns turn-on delay and 60ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS and REACH SVHC compliant component is ideal for high-power applications.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 60ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 4.2nF
Power Dissipation 255W
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 130ns
Reach SVHC Compliant Yes
Max Power Dissipation 255W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 88mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 88mR
Drain to Source Breakdown Voltage 600V