N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This second-generation MDmesh™ II device offers a low 88mΩ drain-source on-resistance and 255W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it boasts fast switching speeds with a 25ns turn-on delay and 60ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS and REACH SVHC compliant component is ideal for high-power applications.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
5.15mm |
| Height |
20.15mm |
| Length |
15.75mm |
| Series |
MDmesh™ II |
| Polarity |
N-CHANNEL |
| Fall Time |
60ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
88mR |
| Package/Case |
TO-247 |
| RoHS Compliant |
Yes |
| Input Capacitance |
4.2nF |
| Power Dissipation |
255W |
| Number of Elements |
1 |
| Turn-On Delay Time |
25ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
130ns |
| Reach SVHC Compliant |
Yes |
| Max Power Dissipation |
255W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
88mR |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
35A |
| Drain to Source Voltage (Vdss) |
600V |
| Drain-source On Resistance-Max |
88mR |
| Drain to Source Breakdown Voltage |
600V |