STW47NM60ND

Снят с производства
STW47NM60ND - Stmicroelectronics
Краткое описание: 600V 35A N-CH MOSFET TO-247 FDmesh II
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Automotive-grade N-channel power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This FDmesh™ II device offers a low 0.075 Ohm typical drain-source on-resistance and a fast diode. Packaged in a TO-247 through-hole mount, it operates from -55°C to 150°C with a maximum power dissipation of 225W. Key switching characteristics include a 30ns turn-on delay and 50ns fall time.
RoHS Compliant
Mount Through Hole
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 50ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 4.2nF
Power Dissipation 255W
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 120ns
Max Power Dissipation 225W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 88mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 88MR
Drain to Source Breakdown Voltage 600V

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