STW48NM60N

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STW48NM60N - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 39A, 70mR, TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 39A continuous drain current. Offers a low 0.055 Ohm typical drain-source on-resistance. Housed in a TO-247 package for through-hole mounting, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 255W. Key switching characteristics include a 99ns turn-on delay and 25.5ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 25.5ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 70mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 4.285nF
Power Dissipation 255W
Threshold Voltage 3.2V
Turn-On Delay Time 99ns
Radiation Hardening No
Turn-Off Delay Time 214ns
Reach SVHC Compliant No
Max Power Dissipation 255W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 70mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 39A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 70MR
Drain to Source Breakdown Voltage 600V

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