STW56NM60ND
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Краткое описание:
600V 50A N-CH Power MOSFET TO-247
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 50A continuous drain current. This single-element transistor utilizes FDmesh process technology and offers a low 60mOhm drain-source resistance at 10V. Packaged in a TO-247 plastic through-hole configuration with 3 pins and a tab, it operates from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.15(Max) |
| Process Technology | FDmesh |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.15(Max) |
| Package Length (mm) | 15.75(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 390000mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 60@10VmOhm |
| Typical Input Capacitance @ Vds | 5000@50VpF |
| Maximum Continuous Drain Current | 50A |
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