STW5NK100Z

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STW5NK100Z - Stmicroelectronics
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Краткое описание: 1kV N-Ch MOSFET, 3.5A, 2.7R, TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 3.5A continuous drain current. Offers a low 2.7 Ohm typical drain-source on-resistance and a maximum of 3.7 Ohm. Packaged in a TO-247 through-hole mount with a maximum power dissipation of 125W. Operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 19ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.7R
Package/Case TO-247
Current Rating 3.5A
RoHS Compliant Yes
DC Rated Voltage 1kV
Package Quantity 30
Input Capacitance 1.154nF
Power Dissipation 125W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 22.5ns
Turn-Off Delay Time 51.5ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 1kV
Drain-source On Resistance-Max 3.7R
Drain to Source Breakdown Voltage 1kV

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