STW69N65M5-4
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Краткое описание:
650V 58A N-CH MOSFET TO-247-4 37mR
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source voltage and 58A continuous drain current. Offers low 37mΩ typical drain-source on-resistance, with a maximum of 45mΩ. Designed for high-efficiency switching with fast switching times, including a 10ns turn-on delay and 11.5ns fall time. Housed in a TO-247-4 package for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 330W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.1mm |
| Height | 21.1mm |
| Length | 15.9mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 11.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| Package/Case | TO-247-4 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 6.42nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11.5ns |
| Max Power Dissipation | 330W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 37mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 710V |
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