STW6N95K5
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Краткое описание:
N-CH Power MOSFET 950V 9A TO-247
Дополнительная информация
N-channel Power MOSFET featuring 950V drain-source voltage and 9A continuous drain current. This single-element transistor utilizes SuperMESH process technology and is housed in a TO-247 package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a ±30V gate-source voltage, 5V gate threshold voltage, and 1250mOhm drain-source resistance at 10V. Maximum power dissipation is 90W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.15(Max) |
| Process Technology | SuperMESH |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.15(Max) |
| Package Length (mm) | 15.75(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 24.45(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13nC |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 950V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Input Capacitance @ Vds | 450@100VpF |
| Maximum Continuous Drain Current | 9A |
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