STW88N65M5
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Краткое описание:
650V 84A N-CH MOSFET TO-247 24mR Rds(on)
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 84A continuous drain current. Offers low 24mOhm typical drain-source on-resistance and 450W maximum power dissipation. Housed in a TO-247 package for through-hole mounting, this device operates from -55°C to 150°C. Key specifications include 141ns turn-on and turn-off delay times and 8.825nF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 29mR |
| Nominal Vgs | 4V |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Input Capacitance | 8.825nF |
| Power Dissipation | 450W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 141ns |
| Turn-Off Delay Time | 141ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 450W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 29mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 24mR |
| Drain to Source Breakdown Voltage | 650V |
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