STWA88N65M5

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STWA88N65M5 - Stmicroelectronics
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Краткое описание: 650V 84A N-CH MOSFET TO-247 24mR
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 84A continuous drain current. Offers a low 0.024 Ohm typical drain-source resistance, with a maximum of 0.029 Ohm. Packaged in a TO-247 long leads format for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 450W. Includes a fall time of 29ns and input capacitance of 8.825nF.
RoHS Compliant
Mount Through Hole
Series MDmesh™ V
Polarity N-CHANNEL
Fall Time 29ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 29mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 8.825nF
Power Dissipation 450W
Radiation Hardening No
Max Power Dissipation 450W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 84A
Drain to Source Voltage (Vdss) 650V
Drain to Source Breakdown Voltage 650V

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