STY105NM50N
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Краткое описание:
N-CHANNEL 600V 110A TO-247-3 MDmesh II MOSFET
Дополнительная информация
The STY105NM50N is a high-power N-channel MOSFET with a maximum drain-to-source breakdown voltage of 600V and a continuous drain current of 110A. It features a low drain-to-source resistance of 22mR and a maximum power dissipation of 625W. The device is packaged in a TO-247-3 case and is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C, and the device is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 22mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 9.6nF |
| Power Dissipation | 625W |
| Turn-On Delay Time | 47ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 353ns |
| Max Power Dissipation | 625W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 22MR |
| Drain to Source Breakdown Voltage | 600V |
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