STY145N65M5

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STY145N65M5 - Stmicroelectronics
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Краткое описание: 650V 138A N-CH MOSFET TO-247 15mR Rds(on)
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source voltage and 138A continuous drain current. Offers low 0.012 Ohm typical drain-source resistance and 710V breakdown voltage. Designed for through-hole mounting in a TO-247-3 package, with a maximum power dissipation of 625W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 255ns and fall time of 82ns.
RoHS Compliant
Mount Through Hole
Width 5.3mm
Height 20.3mm
Length 15.9mm
Series MDmesh™ V
Polarity N-CHANNEL
Fall Time 82ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 15mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 18.5nF
Turn-On Delay Time 255ns
Radiation Hardening No
Turn-Off Delay Time 88ns
Max Power Dissipation 625W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 15mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 138A
Drain to Source Voltage (Vdss) 650V
Drain to Source Breakdown Voltage 710V

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