STY60NK30Z

Не рекомендуется для новых проектов
STY60NK30Z - Stmicroelectronics
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Краткое описание: 300V 60A N-CH MOSFET, 45mR Rds On, TO-247
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-CHANNEL SuperMESH™ Power MOSFET featuring 300V drain-to-source breakdown voltage and 60A continuous drain current. This through-hole component offers a low 45mΩ drain-to-source resistance and a maximum power dissipation of 450W. Designed with Zener protection, it operates within a -55°C to 150°C temperature range and is housed in a TO-247-3 package. Key switching characteristics include a 50ns turn-on delay and a 60ns fall time.
RoHS Compliant
Mount Through Hole
Width 5.3mm
Height 20.3mm
Length 15.9mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 60ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 45mR
Package/Case TO-247-3
Current Rating 60A
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 30
Input Capacitance 7.2nF
Power Dissipation 450W
Threshold Voltage 3.75V
Turn-On Delay Time 50ns
Radiation Hardening No
Turn-Off Delay Time 150ns
Reach SVHC Compliant No
Max Power Dissipation 450W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 45mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 300V
Drain to Source Breakdown Voltage 300V

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