SUB60N06-18-E3

Снят с производства
SUB60N06-18-E3 - Vishay(Siliconix)
Краткое описание: N-Channel MOSFET, 60V, 60A, 18mR, TO-263, Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, 60V Vds, 60A Continuous Drain Current, and 18mΩ Drain-to-Source Resistance. This surface-mount device features a TO-263-3 package, 120W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay, 25ns turn-off delay, and 15ns fall time, with 2nF input capacitance. The component is lead-free, RoHS compliant, and supplied in tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series SUB
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 2nF
Number of Channels 1
Turn-On Delay Time 12ns
Turn-Off Delay Time 25ns
Max Power Dissipation 120W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V