SUB75N06-08-E3
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Краткое описание:
Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
| RoHS | Compliant |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | SUB |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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