SUB75P03-07-E3
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Краткое описание:
P-Channel MOSFET, 75A, 30V, 7mR, TO-263, Surface Mount
Дополнительная информация
P-channel power MOSFET featuring 75A continuous drain current and 30V drain-source breakdown voltage. Offers a low 7mΩ drain-source on-resistance. Designed for surface mounting in a TO-263-3 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 187W. Key switching characteristics include a 25ns turn-on delay and 210ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Weight | 0.079014oz |
| Polarity | P-CHANNEL |
| Fall Time | 210ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7mR |
| Package/Case | TO-263-3 |
| Polarization | P |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 800 |
| Input Capacitance | 9nF |
| Power Dissipation | 187W |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 150ns |
| Max Power Dissipation | 187W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7mR |
| Drain to Source Breakdown Voltage | -30V |
