SUD06N10-225L-E3
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Краткое описание:
N-Channel MOSFET, 100V, 6.5A, 200mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage, 6.5A Continuous Drain Current, and 200mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 (DPAK) surface-mount package, 1.5W power dissipation, and a maximum operating temperature of 175°C. It offers fast switching speeds with a 7ns turn-on delay and 9ns fall time, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | 1V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 240pF |
| Power Dissipation | 1.5W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 200mR |
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