SUD08P06-155L-E3
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Краткое описание:
P-CH MOSFET, 60V, 8.4A, 155mR, DPAK, TO-252
Дополнительная информация
P-channel power MOSFET for general-purpose applications. Features 60V drain-source breakdown voltage and 8.4A continuous drain current. Offers a low 155mΩ drain-source on-resistance. Packaged in a surface-mount DPAK with a 25W maximum power dissipation. Operates across a wide temperature range of -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 155mR |
| Package/Case | DPAK |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 450pF |
| Power Dissipation | 2W |
| Threshold Voltage | -2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 155MR |
| Drain to Source Breakdown Voltage | -60V |
