SUD08P06-155L-GE3
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Краткое описание:
P-Channel MOSFET, 60V, 8.4A, 155mR, TO-252, Surface Mount
Дополнительная информация
P-Channel MOSFET, 60V Drain-Source Voltage, 8.4A Continuous Drain Current, and 155mΩ Max Drain-Source On-Resistance. Features a TO-252 surface mount package, 450pF input capacitance, and 20V Gate-to-Source Voltage. Operates from -55°C to 150°C with a max power dissipation of 20.8W. Includes fast switching times with a 5ns turn-on delay and 7ns fall time. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 155mR |
| Package/Case | TO-252 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 450pF |
| Threshold Voltage | -2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 20.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 155mR |
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