SUD09P10-195-GE3
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Краткое описание:
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT
Дополнительная информация
P-channel MOSFET with a -100V drain-source voltage and -8.8A continuous drain current. Features a low 195mR maximum drain-source on-resistance and a 1.055nF input capacitance. Packaged in a TO-252-3 surface-mount DPAK, this component offers fast switching with 7ns turn-on and 9ns fall times. Operates from -55°C to 150°C with a maximum power dissipation of 32.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 195mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.055nF |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 32.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 162mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -8.8A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 195mR |
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