SUD15N15-95-E3
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Краткое описание:
N-Channel Power MOSFET, 150V, 15A, 95mR, TO-252
Дополнительная информация
N-channel power MOSFET, surface mountable in a TO-252 package. Features 150V drain-source breakdown voltage, 15A continuous drain current, and a maximum drain-source on-resistance of 95mΩ. Operates with a nominal gate-source voltage of 2V and a maximum of 20V. Offers fast switching with turn-on delay of 8ns and fall time of 30ns. Maximum power dissipation is 2.7W, with an operating temperature range of -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 95mR |
| Nominal Vgs | 2V |
| Package/Case | TO-252 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 900pF |
| Power Dissipation | 2.7W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 92mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 95mR |
| Drain to Source Breakdown Voltage | 150V |
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