SUD17N25-165-E3

Не рекомендуется для новых проектов
SUD17N25-165-E3 - Vishay(Siliconix)
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Краткое описание: 250V 17A N-CH MOSFET, 165mR Rds On, TO-263
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED FOR NEW DESIGN)

Дополнительная информация

N-channel power MOSFET featuring 250V drain-source voltage and 17A continuous drain current. Offers a low 165mΩ maximum drain-source on-resistance and 131mΩ typical resistance. Designed for surface mounting in a TO-263-3 package, this component boasts a maximum power dissipation of 136W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay, 30ns turn-off delay, and 100ns fall time.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 100ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 165mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 1.95nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Max Power Dissipation 136W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 131mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 250V
Drain-source On Resistance-Max 165mR

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