SUD19N20-90-E3
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Краткое описание:
200V 19A N-CH MOSFET DPAK 90mR RdsOn
Дополнительная информация
N-channel MOSFET with 200V drain-source voltage and 19A continuous drain current. Features 90mΩ maximum drain-source on-resistance at a nominal Vgs of 4V. Surface mount DPAK package with 1.8nF input capacitance and 60ns fall time. Operates from -55°C to 175°C with 3W maximum power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 19A |
| Voltage | 200V |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 3W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 90mR |
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