SUD19N20-90-T4-E3
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Краткое описание:
200V 19A N-CH MOSFET DPAK 90mR
Дополнительная информация
N-channel power MOSFET, 200V drain-source voltage, 19A continuous drain current, and 90mΩ drain-source resistance. Features a TO-252-3 (DPAK) surface-mount package, 136W maximum power dissipation, and 175°C maximum operating temperature. Ideal for high-efficiency switching applications with fast switching speeds, including 15ns turn-on delay and 30ns turn-off delay. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.8nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 200V |
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