SUD19P06-60-GE3
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Краткое описание:
P-Channel MOSFET, 60V, 18.3A, 60mR, TO-252, Surface Mount
Дополнительная информация
P-Channel Power MOSFET with 60V drain-source voltage and 18.3A continuous drain current. Features low 60mΩ drain-source on-resistance and 38.5W maximum power dissipation. Surface mount TO-252-3 package with fast switching times, including 8ns turn-on and 30ns fall times. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.71nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.3A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 60mR |
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