SUD23N06-31-GE3
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 60V, 9.1A, 31mR Rds On, DPAK
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Voltage, 9.1A Continuous Drain Current, and 31mΩ Max Drain-Source On-Resistance. Features a 3V Threshold Voltage, 670pF Input Capacitance, and 31.25W Max Power Dissipation. This surface-mount device is packaged in a DPAK (TO-252) with dimensions of 6.73mm (L) x 6.22mm (W) x 2.39mm (H). Operating temperature range is -55°C to 150°C. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 68ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 31mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 670pF |
| Power Dissipation | 5.7W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 31.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 31mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 31mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
