SUD25N15-52-E3
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 150V, 25A, 52mR RdsOn, TO-252
Дополнительная информация
N-channel power MOSFET with 150V drain-source breakdown voltage and 25A continuous drain current. Features low 52mΩ maximum drain-source on-resistance and 100W maximum power dissipation. This surface-mount component, housed in a TO-252 package, offers fast switching with turn-on delay of 15ns and fall time of 60ns. Operating temperature range is -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Nominal Vgs | 4V |
| Package/Case | TO-252 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.725nF |
| Power Dissipation | 3W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 52mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 52mR |
| Drain to Source Breakdown Voltage | 150V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
