SUD30N03-30
Краткое описание:
30V 30A N-Channel MOSFET TO-252
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. This metal-oxide semiconductor FET offers a low 30mΩ drain-source resistance and operates with a nominal gate-source voltage of 1V. Packaged in a TO-252 case, it supports a maximum power dissipation of 50W and a maximum operating temperature of 175°C. Ideal for power switching applications, it exhibits fast switching characteristics with turn-on delay times of 10ns and fall times of 15ns.
| RoHS | Not Compliant |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | SUD |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Nominal Vgs | 1V |
| Package/Case | TO-252 |
| RoHS Compliant | No |
| Package Quantity | 2000 |
| Power Dissipation | 50W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
