SUD35N05-26L-E3
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Краткое описание:
N-Channel MOSFET, 55V, 35A, 20mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 35A continuous drain current, 55V drain-source breakdown voltage, and 20mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 50W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include 885pF input capacitance, 1V threshold voltage, and fast switching times with a 5ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 2000 |
| Input Capacitance | 885pF |
| Power Dissipation | 50W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 5ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 20mR |
| Drain to Source Breakdown Voltage | 55V |
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