SUD35N10-26P-GE3

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SUD35N10-26P-GE3 - Vishay(Intertechnologies)
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Краткое описание: N-CHANNEL TrenchFET MOSFET, 35A, 100V, 26mR, TO-252-3
Производитель Vishay(Intertechnologies)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

The SUD35N10-26P-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 83W and a continuous drain current of 35A. The device features a drain to source resistance of 26mR and a gate to source voltage of 20V. It is packaged in a TO-252-3 package and is lead free.
RoHS Not Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 26mR
Package/Case TO-252-3
Package Quantity 1
Input Capacitance 2nF
Number of Channels 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 15ns
Max Power Dissipation 83W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 26mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 26MR

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