SUD40N02-08-E3
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N-Channel MOSFET, 40A, 20V, 8.5mR, DPAK, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 20V drain-source breakdown voltage and 40A continuous drain current. This surface-mount component offers a low 8.5mΩ drain-to-source resistance at a nominal gate-source voltage of 600mV. With a maximum power dissipation of 71W and operating temperatures from -55°C to 175°C, it is suitable for general-purpose power applications. The DPAK package facilitates efficient thermal management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| Nominal Vgs | 600mV |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 2.66nF |
| Power Dissipation | 8.3W |
| Threshold Voltage | 600mV |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 71W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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