SUD40N08-16-E3
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Краткое описание:
N-Channel MOSFET, 80V, 40A, 16mR Rds On, TO-252
Дополнительная информация
N-channel power MOSFET featuring 80V drain-source voltage and 40A continuous drain current. Offers a low 16mΩ drain-source on-resistance. Designed for surface mounting in a TO-252 package, this component boasts a maximum power dissipation of 136W and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a nominal gate-source voltage of 4V and fast switching times with a turn-on delay of 12ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.96nF |
| Power Dissipation | 3W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 80V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16mR |
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