P-channel MOSFET transistor in TO-252-3 package, featuring 30V drain-source voltage and 13A continuous drain current. Offers low 15mΩ drain-to-source resistance and 70W maximum power dissipation. Designed for surface mounting with a compact 6.73mm x 6.22mm x 2.39mm footprint. Operates across a wide temperature range from -55°C to 150°C.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
6.22mm |
| Height |
2.39mm |
| Length |
6.73mm |
| Series |
TrenchFET® |
| Weight |
0.050717oz |
| Polarity |
P-CHANNEL |
| Fall Time |
47ns |
| Packaging |
Tape and Reel |
| Rds On Max |
15mR |
| Package/Case |
TO-252-3 |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
-30V |
| Package Quantity |
2000 |
| Input Capacitance |
3.2nF |
| Power Dissipation |
70W |
| Number of Channels |
1 |
| Turn-On Delay Time |
15ns |
| Turn-Off Delay Time |
60ns |
| Max Power Dissipation |
70W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
15mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
13A |
| Drain to Source Voltage (Vdss) |
30V |