SUD50N02-06
Увеличить
Краткое описание:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| RoHS | Not Compliant |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | SUD |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 100ns |
| Packaging | Tape and Reel |
| RoHS Compliant | No |
| Package Quantity | 2000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 80ns |
| Max Power Dissipation | 8.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
