SUD50N02-06-E3

Снят с производства
SUD50N02-06-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 20V 30A 6mR 100W TO-252-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The SUD50N02-06-E3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 100W and a continuous drain current of 30A. The device features a drain to source breakdown voltage of 20V and a drain to source resistance of 6mR. It is packaged in a TO-252-3 package and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 100ns
Packaging Tape and Reel
Rds On Max 6mR
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 6.6nF
Power Dissipation 8.3W
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 80ns
Max Power Dissipation 100W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 30A
Drain to Source Voltage (Vdss) 20V
Drain to Source Breakdown Voltage 20V

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